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1/11 november 2004 stp6nk70z STF6NK70Z n-channel 700v - 1.5 ? - 5a to-220/to-220fp zener-protected supermesh?mosfet table 1: general features typical r ds (on) = 1.5 ? extremely high dv/dt capability improved esd capability 100% avalanche rated gate charge minimized very low intrinsic capacitances very good manufacturing repeatibility description the supermesh? series is obtained through an extreme optimization of st?s well established stripbased powermesh? layout. in addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. such series complements st full range of high voltage mos- fets including revolutionary mdmesh? products. applications high current, high speed switching ideal for off-line power supplies, adaptors and pfc table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d pw stp6nk70z STF6NK70Z 700 v 700 v < 1.8 ? < 1.8 ? 5 a 5 a (*) 11 0 w 30 w to-220fp to-220 1 2 3 1 2 3 sales type marking package packaging stp6nk70z p6nk70z to-220 tube STF6NK70Z f6nk70z to-220fp tube rev. 2
stp6nk70z - STF6NK70Z 2/11 table 3: absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 5a, di/dt 100a/s, v dd v (br)dss , t j t jmax. (*) limited only by maximum temperature allowed table 4: thermal data table 5: avalanche characteristics table 6: gate-source zener diode protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the device ? s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device ? s integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter value unit stp6nk70z STF6NK70Z v ds drain-source voltage (v gs = 0) 700 v v dgr drain-gate voltage (r gs = 20 k ? ) 700 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 55 (*)a i d drain current (continuous) at t c = 100 c 3.15 3.15 (*) a i dm ( ) drain current (pulsed) 20 20 (*) a p tot total dissipation at t c = 25 c 110 30 w derating factor 0.87 0.24 w/ c v esd(g-s) gate source esd(hbm-c=100pf, r=1.5k ?) 4000 v dv/dt (1) peak diode recovery voltage slope 4.5 v/ns v iso insulation withstand voltage (dc) - 2500 v t j t stg operating junction temperature storage temperature -55 to 150 -55 to 150 c c to-220 to-220fp rthj-case thermal resistance junction-case max 1.14 4.2 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 5a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 200 mj symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 30 v
3/11 stp6nk70z - STF6NK70Z electrical characteristics (t case =25 c unless otherwise specified) table 7: on /off table 8: dynamic table 9: source drain diode (1) pulsed: pulse duration = 300 s, duty cycle 1.5 %. (2) pulse width limited by safe operating area. (3) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 700 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 3.75 4.5 v r ds(on static drain-source on resistance v gs = 10 v, i d = 2.5 a 1.5 1.8 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d = 2.5 a 4.4 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 930 105 22 pf pf pf c oss eq (3) . equivalent output capacitance v gs = 0 v, v ds = 0 to 560 v 70 pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 350 v, i d = 2.5 a, r g = 4.7 ?, v gs = 10 v (see figure 17) 17 18 45 30 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 560 v, i d = 5 a, v gs = 10 v (see figure 20) 34 6.5 17 47 nc nc nc symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 5 20 a a v sd (1) forward on voltage i sd = 5 a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5 a, di/dt = 100 a/s v dd = 35v (see figure 18) 432 2.37 11 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5 a, di/dt = 100 a/s v dd = 35v, t j = 150 c (see figure 18) 588 3.38 11 .5 ns c a
stp6nk70z - STF6NK70Z 4/11 figure 3: safe operating area figure 4: safe operating area for to-220fp figure 5: output characteristics figure 6: thermal impedance figure 7: thermal impedance for to-220fp figure 8: transfer characteristics
5/11 stp6nk70z - STF6NK70Z figure 9: transconductance figure 10: gate charge vs gate-source voltage figure 11: source-drain diode forward char- acteristics figure 12: static drain-source on resistance figure 13: capacitance variations figure 14: normalizzed bvdss vs temperature
stp6nk70z - STF6NK70Z 6/11 figure 15: avalanche energy vs starting tj
7/11 stp6nk70z - STF6NK70Z figure 16: unclamped inductive load test cir- cuit figure 17: switching times test circuit for resistive load figure 18: test circuit for inductive load switching and diode recovery times figure 19: unclamped inductive wafeform figure 20: gate charge test circuit
stp6nk70z - STF6NK70Z 8/11 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
9/11 stp6nk70z - STF6NK70Z l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
stp6nk70z - STF6NK70Z 10/11 table 10: revision history date revision description of changes 24-sep-2004 1 first release. 04-nov-2004 2 complete version
11/11 stp6nk70z - STF6NK70Z information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america

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